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Q. 283 For a silicon diode, value of forward - bias voltage typ... | Filo

Q. 283 For a silicon diode, value of forward - bias voltage typ... | Filo

5.4K views2 months ago

HW11. Determine the diode current at 20°C for a silicon diode with Is =50 nA and an applied forward bias of0.6 V. Assume that the identity factor n=2, q=1.6×10^-19 C, and Boltzman's constant K=1.38×10^-23 J/K.2. Determine both of Vo and ID for the given circuit assuming the simplified equivalent circuit for thediode. Notice that the barrier voltage for Si diode is 0.47 V and the LED barrier voltage is 1.8 V.SiIR 12 VoredID680 ?

HW11. Determine the diode current at 20°C for a silicon diode with Is …

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$(9) A silicon diode has a forward voltage drop of 1.2 \mathrm{~... | Filo$

(9) A silicon diode has a forward voltage drop of 1.2 \mathrm{~... | …

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A one-sided p^ n silicon diode has doping concentrations of Na=4 ×10^17 cm^-3 and Nd=8 ×10^15 cm^-3. The diode cross-sectional area is A=5 ×10^-4 cm^2 .(a) The maximum diffusion capacitance is to be limited to 1 nF. Determine ( i ) the maximum current through the diode, (ii) the maximum forward-bias voltage, and (iii) the diffusion resistance. ( b ) Repeat part (a) if the maximum diffusion capacitance is limited to 0.25 nF. | Numerade

A one-sided p^ n silicon diode has doping concentrations of Na=4 ×1…

$A silicon diode has a forward voltage drop of 1.2 \mathrm{~V} f... | Filo$

A silicon diode has a forward voltage drop of 1.2 \mathrm{~V} f..…

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