Kioxia and Nanya Technology have co-developed a type of 4F2 DRAM known as Oxide-Semiconductor Channel Transistor DRAM (OCTRAM ...

Power-converter density and efficiency can be improved using techniques like GaN HEMTs in a half-bridge configuration.

Back in 2019 we developed the industry’s first enhancement-mode (E-mode) GaN transistor, enabled by high-k dielectric metal gate technology; and we pioneered monolithic three-dimensional stacking ...

The global power MOSFET market size was US$ 8.6 billion in 2021. The global power MOSFET market size is forecast to reach US$ 13.8 billion by 2030, growing at a compound annual growth rate (CAGR) of 6 ...

The text indicates that Jacob meets two camps of angels—one set of angels that accompanied him outside the Holy Land and ...

Woodward’s engineering recipe using William’s ∆Vbe theory to control the temperature of batches of rising dough.

ROHM Semiconductor today announced the adoption of its EcoSiC™ products, including SiC MOSFETs and SiC Schottky barrier ...

Transistor-level view of cluster of standard cells in original design; (b) New complex cell after mapping in hybrid optimization; (c) Comparison of original cluster's characteristics to those of ...

Researchers at Stanford University recently introduced a CMOS-compatible approach to engineer the tensile strain (i.e., stretchiness) in monolayer semiconductor transistors. "We started brainstorming ...

Abstract: We demonstrate ultra thin body, high-κ, metal gate, Si transistors down to 3 nm Si channel thickness. We further show that there is an enhancement (~20%) of injection velocity when channel ...

A discovery by an international team of scientists has revealed room-temperature ferroelectric and resistive switching behaviors in single-element tellurium (Te) nanowires, paving the way for ...