C&EN23d
“Nano-In-Nano” Schottky Diodes Fabricated by Combining Self-Aligned Nanogap Patterning with Bottom-Up ZnO Nanowire Growth
ZnO nanowire Schottky diodes are produced with a device length of a few tens of nanometers and a performance significantly exceeding a ZnO thin film equivalent. The first technique is adhesion ...
The National Law Review26d
Fifth Circuit Nullifies Nasdaq’s Diversity Rule for Corporate Boards
We collaborate with the world's leading lawyers to deliver news tailored for you. Sign Up to receive our free e-Newsbulletins Some states have laws and ethical rules regarding solicitation and ...
C&EN29d
Fine-Modulation of Perovskite Ion-Additive Binding Interaction Using Multidentate Ligation for High Performance Perovskite Light-Emitting Diodes
Department of Material Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan 44919, Republic of Korea ...
IEEE1mon
Polarity Reversible Freestanding AlN Thin Film and Its Application in Schottky Diode
Scanned probe measurements (SPMs) were used to characterize as-transferred AlN films’ polarity. Then, Schottky barrier diodes (SBDs) were built on the sample with different polarity and ...
powerelectronicsnews1mon
Gallium Oxide Heterojunction Diode Demonstrates Avalanche and Surge Robustness
2023) Figure 2: (a) The quasistatic reverse characteristics of the HJD versus temperature, indicating the UIS region for avalanche testing; (b) the UIS test circuit ... In a homojunction p-n diode, ...
University of California2mon
Information center
The dashboards highlighted on this page (and within the Equity, diversity, and inclusion subject area) share system data that reflect the diversity of the UC community, assess equity and inequity in ...