Microchip's IGBT 7 series for power control in various applications. These devices offer increased power capability and ...

While GaN and SiC enjoy the glory, advances in silicon device technology continue to make the IGBT a dominant force in power ...

According to Di Marco, SiC-based power modules offer a significant efficiency boost in energy recovery compared to traditional IGBT-based modules ... reliability, and thermal characteristics of SiC ...

Typical voltage sag characteristics also tend to reduce battery life dramatically ... This consists of a diode bridge and an IGBT transistor. Should they malfunction it is probable that they fail to ...

Toshiba is aiming at 400V automotive systems with a 400V photo-relay that can handle 900V and ~30mA. Recommended maximum operating voltage is 720V. Called TLX9150M, it measures around 10 x 8 x 2.5mm ...

The third generation of 1,200V SiC Schottky diodes (5A–40A) with an MPS design from Vishay Intertechnology expands Rutronik's diode portfolio. The diodes increase the efficiency and reliability of ...

To provide higher efficiency and power density for industrial applications, Vishay Intertechnology, Inc. has introduced a new 40V TrenchFET Gen V n-channel power MOSFET in the PowerPAK 10x12 package ...

In this module, we will discuss unusual behaviors that you may observe in an individual with autism. What are the behavior characteristics of ASD? What specific behaviors might indicate that an ...