One way around this problem is to replace silicon with graphene-like 2D materials that maintain their semiconducting ...

The Lawrence Livermore National Laboratory is working on a petawatt-class thulium laser that is said to be 10 times more ...

EUV, extreme ultraviolet lithography, is nearly completely associated with the Dutch company ASML, the only maker of EUV ...

The project aims for the next evolution of EUV lithography, centered around the lab-developed driver system named the Big ...

A research team has developed high-performance diamond/ε-Ga 2 O 3 heterojunction pn diodes based on ultrawide bandgap semiconductors, achieving breakdown voltages exceeding 3 kV. This work was ...

Ga2O3 heterojunction pn diodes based on ultrawide bandgap semiconductors, achieving breakdown voltages exceeding 3 kV. This ...

Impact Rare Earth Technological metals are often called as such due to their outstanding physical properties. This is, for example, the case with the extreme resistance of metals such ...

"In our high-performance p-type MOSFETs (Metal-oxide-semiconductor FETs), we circumvent these challenges using a uniformly doped 2D TMD channel (Nb-doped MoSe 2 crystal) and by tuning up its ...

The LLNL-led initiative will evaluate the Big Aperture Thulium (BAT) laser technology to enhance EUV source efficiency by ...

Sandia National Labs has demonstrated a high power 1200V MOSFET using gallium nitride (GaN) using a hafnium gate with a ...

Decades of cutting-edge laser, optics and plasma physics research at Lawrence Livermore National Laboratory (LLNL) played a key role in the underlying ...