Step into the future of power electronics where SiC SBDs revolutionise efficiency and performance in high-power applications.
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Researchers develop high-performance heterojunction pn diodesmaking them highly suitable for ultra-high-power applications. More information: Jianguo Zhang et al, Ultrawide Bandgap Diamond/ε-Ga 2 O 3 Heterojunction pn Diodes with Breakdown Voltages over 3 ...
Bipolar devices, such as pn diodes and bipolar junction transistors ... making them highly suitable for ultra-high-power applications.
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